| Item type |
紀要論文 / Departmental Bulletin Paper(1) |
| 公開日 |
2023-03-30 |
| タイトル |
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|
タイトル |
トランジスタおよびダイオードのX線照射効果に関する研究 |
| タイトル |
|
|
タイトル |
Studies on the X-ray Irradiation Effects in Transistors and Diodes |
|
言語 |
en |
| 言語 |
|
|
言語 |
jpn |
| 資源タイプ |
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|
資源タイプ識別子 |
http://purl.org/coar/resource_type/c_6501 |
|
資源タイプ |
departmental bulletin paper |
| 著者 |
川畑, 敬志
向坂, 正勝
法沢, 恵造
Kawabata, Keishi
Sakisaka, Masakatsu
Norisawa, Keizo
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| 抄録 |
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内容記述タイプ |
Abstract |
|
内容記述 |
Characteristics of diodes and transistors by X-ray irradiation have been studied. The X-rays were obtaind by the 2MV Van de Graaff accelerator of Kyoto University using the brems-strahlung of 1.5MeV electrons upon gold target. The reverse current of 1S120 diodes increased gradually up to about 1X104 (rad (Si)) and steeply or rather steeply above this dose. The 70% recovery time was about 110 hours. The gain of 2SC183 transistors operated actively at constant emitter current, generally degraded more according to larger collector-base current. The radiation damage of 2SC476 transistors was found greater than that of 2SC183, both under passive operation. These facts would be attributed to the surface effect, that is, an increase of recombination velocity on the semiconductor surface. |
| 書誌情報 |
広島工業大学研究紀要
巻 06,
号 1,
p. 83-87,
発行日 1971
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| 出版者 |
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出版者 |
広島工業大学 |
| ISSN |
|
|
収録物識別子タイプ |
ISSN |
|
収録物識別子 |
03851672 |
| 書誌レコードID |
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|
収録物識別子タイプ |
NCID |
|
収録物識別子 |
AN0021271X |
| フォーマット |
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内容記述タイプ |
Other |
|
内容記述 |
application/pdf |
| 著者版フラグ |
|
|
出版タイプ |
VoR |
|
出版タイプResource |
http://purl.org/coar/version/c_970fb48d4fbd8a85 |
kenkyukiyo0601083.pdf (577.6 kB)
