2026-03-08T13:20:23Z https://it-hiroshima.repo.nii.ac.jp/oai

oai:it-hiroshima.repo.nii.ac.jp:00000603 2023-07-25T10:44:56Z 1:17:213

Model of the Light-Induced Defect Creation in Hydrogenated Amorphous Silicon 森垣, 和夫 モリガキ, カズオ Morigaki, Kazuo 549.8 application/pdf A previous model that prolonged illumination creates two types of dangling bonds, i.e., normal dangling bonds and hydrogen-related dangling bonds (dangling bonds having hydrogen at a nearby site) is modified by taking into account recent observations in a-Si:H, particularly on diffusion of hydrogen dissociated from a Si-H bond by nonradiative recombination at hydrogenrelated dangling bonds and intradistance within a close pair of two types of dangling bonds. departmental bulletin paper 広島工業大学 1999-02-01 VoR application/pdf 広島工業大学研究紀要 33 19 24 AN0021271X 03851672 https://it-hiroshima.repo.nii.ac.jp/record/603/files/kenkyukiyo33019.pdf https://it-hiroshima.repo.nii.ac.jp/records/603 eng http://ci.nii.ac.jp/naid/40003284393/ http://ci.nii.ac.jp/naid/40003284393/